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2N4393 Datasheet(PDF) 5 Page - Vishay Siliconix |
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2N4393 Datasheet(HTML) 5 Page - Vishay Siliconix |
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5 / 7 page  2N/PN/SST4391 Series Vishay Siliconix Document Number: 70241 S-04028—Rev. F, 04-Jan-01 www.vishay.com 7-5 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Noise Voltage vs. Frequency 100 10 1 10 100 1 k 100 k 10 k VDS = 10 V Forward Transconductance and Output onductance vs. Gate-Source Cutoff Voltage* 50 0 0 –2 –10 500 200 0 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz Gate Leakage Current 030 TA = 125_C TA = 25_C Common-Gate Input Admittance 100 10 1 0.1 100 1000 200 500 VDG = 10 V ID = 10 mA TA = 25_C Common-Gate Forward Admittance Common-Gate Reverse Admittance 100 10 1 0.1 100 1000 200 500 VDG = 10 V ID = 10 mA TA = 25_C 10 1.0 0.1 0.01 100 1000 200 500 VDG = 10 V ID = 10 mA TA = 25_C VDG – Drain-Gate Voltage (V) VGS(off) – Gate-Source Cutoff Voltage (V) f – Frequency (Hz) f – Frequency (MHz) f – Frequency (MHz) f – Frequency (MHz) 40 30 20 10 –4 –6 –8 IGSS @ 125 _C 6 121824 400 200 100 0.1 pA 1 pA 10 pA 100 pA 1 nA 10 nA ID = 1 mA ID = 10 mA gfs gos 1 mA IGSS @ 25_C ID = 10 mA gig big –gfg bfg gfg –grg –brg +grg 10 mA IG(on) @ ID 1 mA |
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