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FGA180N33ATTU Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FGA180N33ATTU Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  tm ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA180N33AT Rev. A April 2008 FGA180N33AT 330V, 180A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC = 40A • High input impedance • RoHS compliant Applications PDP SYSTEM General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- tions where low conduction and switching losses are essential. Absolute Maximum Ratings Notes: 1: Repetitive test, pulse width = 100usec, Duty = 0.1 * IC_pulse limited by max Tj Thermal Characteristics GE C TO-3P G C E Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage ± 30 V IC Collector Current @ TC = 25 oC 180 A IC pulse (1) Pulsed Collector Current @ TC = 25 oC 450 A PD Maximum Power Dissipation @ TC = 25 oC 390 W Maximum Power Dissipation @ TC = 100 oC 156 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.32 oC/W RθJA Thermal Resistance, Junction to Ambient - 40 oC/W |
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