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UZ0103 Datasheet(PDF) 2 Page - Unisonic Technologies |
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UZ0103 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page ![]() UZ0103 Preliminary TRIACS UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R401-037.b ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltage UZ0103M VDRM 600 V UZ0103N 800 V Repetitive Peak Reverse Voltage UZ0103M VRRM 600 V UZ0103N 800 V RMS On-State Current (full sine wave) TL=50°C IT(RMS) 1 A Non Repetitive Surge Peak On-State Current (full cycle, TJ initial=25°C) F=50Hz, t=20ms ITSM 8 A F=60Hz, t=16.7ms 8.5 A I 2t Value for Fusing tp=10ms I 2t 0.35 A 2s Critical Rate of Rise of On-State Current: IG=2*IGT, tr≤100ns F=120Hz, TJ=125°C dI/dt 20 A/µs Peak Gate Current tp=20µs, TJ=125°C IGM 1 A Average Gate Power Dissipation TJ=125°C PG(AV) 1 W Operating Junction Temperature TJ -40~+125 °C Storage Junction Temperature TSTG -40~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-92 θJA 150 °C/W SOT-223 60 °C/W Junction to Case TO-92 θJC 60 °C/W SOT-223 25 °C/W Note: S=Copper surface under tab. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS QUADRANT MIN TYP MAX UNIT Repetitive Peak Off-State or Reverse Current IDRM, IRRM VDRM=VRRM TJ=25°C 5 µA TJ=125°C 0.5 mA Gate Trigger Current (Note 1) IGT VD=12V, RL=30Ω I-II-III 3 mA IV 5 mA Gate Trigger Voltage VGT ALL 1.3 V Gate Non-Trigger Voltage VGD VD=VDRM, RL=3.3kΩ, TJ=125°C ALL 0.2 V Holding Current (Note 2) IH IT=50mA 7 mA Latching Current IL IG=1.2IGT I-III-IV 7 mA II 15 mA Rise of Off-State Voltage (Note 2) dVD/dt VD=67%VDRM, Gate Open, TJ=110°C 10 V/µs Rise of Off-State Voltage at Commutation (Note 2) (dVCOM/dt)c (dI/dt)c=0.44A/ms, TJ=110°C 0.5 V/µs On-State Voltage (Note 2) VTM ITM=1.4 A, tp=380µs, TJ=25°C 1.56 V Dynamic Resistance (Note 2) RD Dynamic resistance, TJ=125°C 400 mΩ Notes: 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of A2 referenced to A1. |
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