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AT45DB011D Datasheet(PDF) 45 Page - List of Unclassifed Manufacturers |
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AT45DB011D Datasheet(HTML) 45 Page - List of Unclassifed Manufacturers |
45 / 51 page 45 3639J–DFLASH–11/2012 AT45DB011D Figure 25-2. Algorithm for Randomly Modifying Data Notes: 1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000 cumulative page erase and program operations. 2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command must use the address specified by the Page Address Pointer. 3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000 cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application note AN-4 (“Using Adesto’s Serial DataFlash”) for more details. START MAIN MEMORY PAGE TO BUFFER TRANSFER (53H) INCREMENT PAGE ADDRESS POINTER (2) AUTO PAGE REWRITE (2) (58H) END provide address of page to modify If planning to modify multiple bytes currently stored within a page of the Flash array MAIN MEMORY PAGE PROGRAM THROUGH BUFFER (82H) BUFFER WRITE (84H) BUFFER TO MAIN MEMORY PAGE PROGRAM (83H) |
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