AT45DB011D_12 datasheet(32/51 Pages) ETC2

Part #	AT45DB011D

Description	1-megabit 2.7-volt Minimum DataFlash

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32

3639J–DFLASH–11/2012

AT45DB011D

18. Electrical Specifications

Notes:

1. I

CC1 during a buffer read is 20mA maximum @ 20MHz

2. All inputs (SI, SCK, CS, WP, and RESET) are guaranteed by design to be 5-Volt tolerant

Table 18-1.

Absolute Maximum Ratings*

Temperature under Bias ................................. -55

C to +125C

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. The "Absolute Maximum Rat-

ings" are stress ratings only and functional

operation of the device at these or any other con-

ditions beyond those indicated in the operational

sections of this specification is not implied. Expo-

sure to absolute maximum rating conditions for

extended periods may affect device reliability.

Voltage Extremes referenced in the "Absolute

Maximum Ratings" are intended to accommo-

date short duration undershoot/overshoot condi-

tions and does not imply or guarantee functional

device operation at these levels for any extended

period of time

Storage Temperature...................................... -65

C to +150C

All Input Voltages (except V

CC but including NC Pins)

with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages

with Respect to Ground .............................-0.6V to V

CC + 0.6V

Table 18-2.

DC and AC Operating Range

AT45DB011D

Operating Temperature (Case)

Ind.

-40

Cto85C

V

CC Power Supply

2.7V to 3.6V

Table 18-3.

DC Characteristics

Symbol

Parameter

Condition

Min

Typ

Max

Units

I

DP

Deep Power-down Current

CS, RESET, WP = V

IH,all

inputs at CMOS levels

15

25

µA

I

SB

Standby Current

CS, RESET, WP = V

IH,all

inputs at CMOS levels

25

50

µA

I

CC1

(1)

Active Current, Read Operation

f = 20MHz; I

OUT = 0mA;

V

CC = 3.6V

710

mA

f = 33MHz; I

OUT = 0mA;

V

CC = 3.6V

812

mA

f = 50MHz; I

OUT = 0mA;

V

CC = 3.6V

10

14

mA

f = 66MHz; I

OUT = 0mA;

V

CC = 3.6V

15

25

mA

I

CC2

Active Current, Program/Erase

Operation

V

CC = 3.6V

12

20

mA

I

LI

Input Load Current

V

IN = CMOS levels

1

µA

I

LO

Output Leakage Current

V

I/O = CMOS levels

1

µA

V

IL

Input Low Voltage

V

CC x 0.3

V

IH

Input High Voltage

V

CC x 0.7

V

OL

Output Low Voltage

I

OL = 1.6mA; VCC = 2.7V

0.4

V

OH

Output High Voltage

I

OH = -100µA

V

CC -0.2V

V

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