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AT45DB011D Datasheet(PDF) 32 Page - List of Unclassifed Manufacturers |
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AT45DB011D Datasheet(HTML) 32 Page - List of Unclassifed Manufacturers |
32 / 51 page 32 3639J–DFLASH–11/2012 AT45DB011D 18. Electrical Specifications Notes: 1. I CC1 during a buffer read is 20mA maximum @ 20MHz 2. All inputs (SI, SCK, CS, WP, and RESET) are guaranteed by design to be 5-Volt tolerant Table 18-1. Absolute Maximum Ratings* Temperature under Bias ................................. -55 C to +125C *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent dam- age to the device. The "Absolute Maximum Rat- ings" are stress ratings only and functional operation of the device at these or any other con- ditions beyond those indicated in the operational sections of this specification is not implied. Expo- sure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage Extremes referenced in the "Absolute Maximum Ratings" are intended to accommo- date short duration undershoot/overshoot condi- tions and does not imply or guarantee functional device operation at these levels for any extended period of time Storage Temperature...................................... -65 C to +150C All Input Voltages (except V CC but including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to V CC + 0.6V Table 18-2. DC and AC Operating Range AT45DB011D Operating Temperature (Case) Ind. -40 Cto85C V CC Power Supply 2.7V to 3.6V Table 18-3. DC Characteristics Symbol Parameter Condition Min Typ Max Units I DP Deep Power-down Current CS, RESET, WP = V IH,all inputs at CMOS levels 15 25 µA I SB Standby Current CS, RESET, WP = V IH,all inputs at CMOS levels 25 50 µA I CC1 (1) Active Current, Read Operation f = 20MHz; I OUT = 0mA; V CC = 3.6V 710 mA f = 33MHz; I OUT = 0mA; V CC = 3.6V 812 mA f = 50MHz; I OUT = 0mA; V CC = 3.6V 10 14 mA f = 66MHz; I OUT = 0mA; V CC = 3.6V 15 25 mA I CC2 Active Current, Program/Erase Operation V CC = 3.6V 12 20 mA I LI Input Load Current V IN = CMOS levels 1 µA I LO Output Leakage Current V I/O = CMOS levels 1 µA V IL Input Low Voltage V CC x 0.3 V V IH Input High Voltage V CC x 0.7 V V OL Output Low Voltage I OL = 1.6mA; VCC = 2.7V 0.4 V V OH Output High Voltage I OH = -100µA V CC -0.2V V |
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