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AT45DB011D Datasheet(PDF) 26 Page - List of Unclassifed Manufacturers

Part # AT45DB011D
Description  1-megabit 2.7-volt Minimum DataFlash
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Manufacturer  ETC2 [List of Unclassifed Manufacturers]
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AT45DB011D Datasheet(HTML) 26 Page - List of Unclassifed Manufacturers

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26
3639J–DFLASH–11/2012
AT45DB011D
14.2
Operation Mode Summary
The commands described previously can be grouped into four different categories to better
describe which commands can be executed at what times.
Group A commands consist of:
1.
Main Memory Page Read
2.
Continuous Array Read
3.
Read Sector Protection Register
4.
Read Sector Lockdown Register
5.
Read Security Register
Group B commands consist of:
1.
Page Erase
2.
Block Erase
3.
Sector Erase
4.
Chip Erase
5.
Main Memory Page to Buffer Transfer
6.
Main Memory Page to Buffer Compare
7.
Buffer to Main Memory Page Program with Built-in Erase
8.
Buffer to Main Memory Page Program without Built-in Erase
9.
Main Memory Page Program through Buffer
10. Auto Page Rewrite
Group C commands consist of:
1.
Buffer Read
2.
Buffer Write
3.
Status Register Read
4.
Manufacturer and Device ID Read
Group D commands consist of:
1.
Erase Sector Protection Register
2.
Program Sector Protection Register
3.
Sector Lockdown
4.
Program Security Register
If a Group A command is in progress (not fully completed), then another command in Group A,
B, C, or D should not be started. However, during the internally self-timed portion of Group B
commands one through four, any command in Group C can be executed. During the internally
self-timed portion of Group B commands five through ten, only Group C commands three and
four can be executed. Finally, during the internally self-timed portion of a Group D command,
only the Status Register Read command should be executed.


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