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2N877 Datasheet(PDF) 1 Page - Digitron Semiconductors

Part # 2N877
Description  SILICON CONTROLLED RECTIFIER
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Manufacturer  DIGITRON [Digitron Semiconductors]
Direct Link  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N877 Datasheet(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
2N877-2N881, 2N885-2N889
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Peak forward blocking voltage
Working and repetitive peak
reverse voltage
Non-repetitive peak reverse voltage
VFXM
VROM(wkg) and VROM(rep)
VROM(non-rep) < 5 milliseconds
Part number
TJ = -65° to 125°C
RGK = 1000 ohms maximum
TJ = -65° to 150°C
TJ = -65° to 125°C
Units
2N877, 2N885
30
30
45
V
2N878, 2N886
60
60
90
V
2N879, 2N887
100
100
130
V
2N880, 2N888
150
150
200
V
2N881, 2N889
200
200
275
V
Rating
Symbol
Value
Unit
Peak forward voltage
VF(pk)
300
V
RMS on-state current
IT(RMS)
0.5
A
Peak one cycle surge (non-repetitive) on-state current
IFM
7.0
A
Peak forward gate power dissipation
PGM
0.1
W
Average forward gate power dissipation
PG(AV)
0.01
W
Peak gate voltage, forward and reverse
VGFM, VGRM
6.0
V
Storage temperature
Tstg
-65 to 150
°C
Operating temperature
TJ
-65 to 150
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Units
Test Condition
Forward blocking current
VFX = rated VFXM, RGK = 1000ohms
-
0.03
10
TJ = 25°C
2N877-2N881
-
10
100
TJ = 125°C
-
0.03
1
TJ = 25°C
2N885-2N889
IFX
-
10
20
µAdc
TJ = 125°C
Reverse blocking current
VRX = rated VROM(rep)
-
0.1
10
TJ = 25°C
2N877-2N881
-
10
100
TJ = 125°C
-
0.1
1
TJ = 25°C
2N885-2N889
IRX
-
10
20
µAdc
TJ = 125°C
Reverse gate current
IGRM
-
1
10
µAdc
VGRM = 2V, TJ = 25°C
Peak on-state voltage
VFM
-
1.3
1.9
V
TJ = 25°C, IFX = 1A, single, half sinewave
pulse, 2.0ms wide max.
Holding current
2N877-2N881
0.4
1.7
5.0
2N885-2N889
IH
0.4
1.1
3.0
mAdc
TJ = 25°C, RGK = 1000ohms, VFX = 24V dc
Critical rate of rise of applied forward voltage
dv/dt
-
40
-
V/µs
TJ = 125°C, RGK = 1000ohms, VFXM = rated
VFXM
Turn-on time
(Delay time + rise time)
td + tr
-
1.0
-
µs
TJ = 25°C, VFX = rated VFXM, IFM = 1A, gate
supply: 6V, 300ohms
Circuit commutated turn-off time (all types)
toff
-
15
-
µs
TJ = 125°C, RGK = 1000ohms, IFM = 1A,
IR(recovery) = 1A, reapplied VFXM = rated,
rate of rise of reapplied forward blocking
voltage = 20V/µs
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130123


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