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2N877 Datasheet(PDF) 1 Page - Digitron Semiconductors |
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2N877 Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 5 page ![]() DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 2N877-2N881, 2N885-2N889 SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Peak forward blocking voltage Working and repetitive peak reverse voltage Non-repetitive peak reverse voltage VFXM VROM(wkg) and VROM(rep) VROM(non-rep) < 5 milliseconds Part number TJ = -65° to 125°C RGK = 1000 ohms maximum TJ = -65° to 150°C TJ = -65° to 125°C Units 2N877, 2N885 30 30 45 V 2N878, 2N886 60 60 90 V 2N879, 2N887 100 100 130 V 2N880, 2N888 150 150 200 V 2N881, 2N889 200 200 275 V Rating Symbol Value Unit Peak forward voltage VF(pk) 300 V RMS on-state current IT(RMS) 0.5 A Peak one cycle surge (non-repetitive) on-state current IFM 7.0 A Peak forward gate power dissipation PGM 0.1 W Average forward gate power dissipation PG(AV) 0.01 W Peak gate voltage, forward and reverse VGFM, VGRM 6.0 V Storage temperature Tstg -65 to 150 °C Operating temperature TJ -65 to 150 °C ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Units Test Condition Forward blocking current VFX = rated VFXM, RGK = 1000ohms - 0.03 10 TJ = 25°C 2N877-2N881 - 10 100 TJ = 125°C - 0.03 1 TJ = 25°C 2N885-2N889 IFX - 10 20 µAdc TJ = 125°C Reverse blocking current VRX = rated VROM(rep) - 0.1 10 TJ = 25°C 2N877-2N881 - 10 100 TJ = 125°C - 0.1 1 TJ = 25°C 2N885-2N889 IRX - 10 20 µAdc TJ = 125°C Reverse gate current IGRM - 1 10 µAdc VGRM = 2V, TJ = 25°C Peak on-state voltage VFM - 1.3 1.9 V TJ = 25°C, IFX = 1A, single, half sinewave pulse, 2.0ms wide max. Holding current 2N877-2N881 0.4 1.7 5.0 2N885-2N889 IH 0.4 1.1 3.0 mAdc TJ = 25°C, RGK = 1000ohms, VFX = 24V dc Critical rate of rise of applied forward voltage dv/dt - 40 - V/µs TJ = 125°C, RGK = 1000ohms, VFXM = rated VFXM Turn-on time (Delay time + rise time) td + tr - 1.0 - µs TJ = 25°C, VFX = rated VFXM, IFM = 1A, gate supply: 6V, 300ohms Circuit commutated turn-off time (all types) toff - 15 - µs TJ = 125°C, RGK = 1000ohms, IFM = 1A, IR(recovery) = 1A, reapplied VFXM = rated, rate of rise of reapplied forward blocking voltage = 20V/µs sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130123 |
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