STF40N20 datasheet(4/18 Pages) STMICROELECTRONICS

Part #	STF40N20

Description	N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STB40N20 - STP40N20 - STP40N20FP - STW40N20

4/18

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1mA, VGS =0

200

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max ratings

VDS = max ratings,

TC = 125°C

1

10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 20A

0.038

0.045

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward

transconductance

VDS = 15V, ID = 20A

30

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

2500

510

78

pF

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 100V, ID = 20A

RG =4.7Ω VGS = 10V

(see Figure 16)

20

44

74

22

ns

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 160V, ID = 40A,

VGS = 10V

(see Figure 17)

75

13.2

35.5

nC

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