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BQ24296 Datasheet(PDF) 8 Page - Texas Instruments |
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BQ24296 Datasheet(HTML) 8 Page - Texas Instruments |
8 / 48 page ![]() bq24296 bq24297 SLUSBP6A – SEPTEMBER 2013 – REVISED OCTOBER 2013 www.ti.com THERMAL INFORMATION RGE PACKAGE THERMAL METRIC(1) UNITS 24-PIN θJA Junction-to-ambient thermal resistance 32.2 θJCtop Junction-to-case (top) thermal resistance 29.8 θJB Junction-to-board thermal resistance 9.1 °C/W ψJT Junction-to-top characterization parameter 0.3 ψJB Junction-to-board characterization parameter 9.1 θJCbot Junction-to-case (bottom) thermal resistance 2.2 (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. space ELECTRICAL CHARACTERISTICS VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNITS QUIESCENT CURRENTS VVBUS < VUVLO, VBAT = 4.2 V, leakage between 5 µA BAT and VBUS High-Z Mode, or no VBUS, BATFET disabled IBAT Battery discharge current (BAT, SW, SYS) 16 20 µA (REG07[5] = 1), –40°C – 85°C High-Z Mode, or no VBUS, BATFET enabled 32 55 µA (REG07[5] = 0), –40°C – 85°C VVBUS = 5 V, High-Z mode, No battery 15 30 µA VVBUS > VUVLO, VVBUS > VBAT, converter not 1.5 3 mA switching IVBUS Input supply current (VBUS) VVBUS > VUVLO, VVBUS > VBAT, converter switching, 4 mA VBAT=3.2V, ISYS=0A VVBUS > VUVLO, VVBUS > VBAT, converter switching, 3.5 mA charge disable, VBAT=3.8V, ISYS=100µA VBAT=4.2V, Boost mode, IVBUS = 0A, converter IBOOST Battery Discharge Current in boost mode 3.5 mA switching VBUS/BAT POWER UP VVBUS_OP VBUS operating range 3.9 6.2 V VVBUS_UVLOZ VVBUS rising 3.6 V VBUS for active I2C, no battery VSLEEP Sleep mode falling threshold VVBUS falling, VVBUS-VBAT 35 80 120 mV VSLEEPZ Sleep mode rising threshold VVBUS rising, VVBUS-VBAT 170 250 350 mV VACOV VBUS over-voltage rising threshold VVBUS rising 6.2 6.6 V VACOV_HYST VBUS Over-Voltage Falling Hysteresis VVBUS falling 250 mV VBAT_UVLOZ VBAT rising 2.3 V Battery for active I2C, no VBUS VBAT_DPL Battery depletion threshold VBAT falling 2.4 2.6 V VBAT_DPL_HY Battery depletion rising hysteresis VBAT rising 200 mV VVBUSMIN Bad adapter detection threshold VVBUS falling 3.8 V IBADSRC Bad adapter detection current source 30 mA tBADSRC Bad source detection duration 30 ms 8 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: bq24296 bq24297 |
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