1

Features

–2.7V Read

– 5V Program/Erase

– One 8K Words (16K bytes) Boot Block with Programming Lockout

– Two 8K Words (16K bytes) Parameter Blocks

– One 488K Words (976K bytes) Main Memory Array Block

µs/Word

– 25 mA Active Current

–50

µA CMOS Standby Current

Description

The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized

as 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile

CMOS technology, the devices offer access times to 120 ns with power dissipation of

just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50

µA.

8-Megabit

(512K x 16)

CMOS Flash

Memory

AT49BV8192

AT49BV8192T

AT49LV8192

AT49LV8192T

0978B-A–11/97

Pin Configurations

Pin Name

Function

A0 - A18

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

RESET

Reset

V

PP

Program/Erase Power

Supply

I/O0 - I/O15

Data

Inputs/Outputs

NC

No Connect

SOIC (SOP)

RESET

A8

A9

A10

A11

A12

A13

A14

A15

A16

NC

GND

I/O15

I/O7

I/O14

I/O6

I/O13

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

44

WE

I/O5

I/O12

25

26

A18

A17

A7

A6

A5

A4

A3

A2

A1

GND

I/O0

I/O8

I/O1

I/O9

I/O2

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

VPP

I/O10

I/O3

19

20

21

22

I/O4

VCC

23

24

CE

OE

I/O11

A0

TSOP Top View

Type 1

A13

A12

A10

A11

A8

NC

A9

NC

A18

NC

RESET

VPP

WE

NC

1

2

4

3

6

5

10

9

7

8

14

13

11

12

I/O3

I/O11

I/O10

I/O2

I/O12

I/O5

I/O4

VCC

I/O6

I/O13

I/O7

I/O14

I/O15

GND

41

40

38

39

36

35

37

44

42

43

46

45

47

48

33

34

I/O1

I/O9

15

16

A17

A7

A6

20

19

I/O8

I/O0

30

29

31

32

17

18

A5

A15

A14

NC

A16

21

22

23

24

25

26

27

28

A4

A3

A2

A1

GND

OE

CE

A0

(continued)