AT49F010/HF010

1-Megabit

(128K x 8)

5-volt Only

CMOS Flash

Memory

AT49F010

AT49HF010

Features

- 5V Read

- 5V Reprogramming

- 30 mA Active Current

- 100

µA CMOS Standby Current

Pin Configurations

Pin Name

Function

A0 - A16

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

NC

No Connect

The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash

Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu-

factured with Atmel’s advanced nonvolatile CMOS technology, the devices offer ac-

cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the

commercial temperature range. When the device is deselected, the CMOS standby

current is less than 100

µA.

To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re-

quire high input voltages for programming. Five-volt-only commands determine the

read and programming operation of the device. Reading data out of the device is

similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is per-

formed by erasing the entire 1 megabit of memory and then programming on a byte

by byte basis. The byte programming time is a fast 50

µs. The end of a program cycle

can be optionally detected by the DATA polling feature. Once the end of a byte pro-

Description

(continued)

DIP Top View

TSOP Top View

Type 1

PLCC Top View

0852AX–5/97