1

Features

µµµµs/Byte typical

– 25 mA Active Current

–50

µµµµA CMOS Standby Current

Description

The AT49BV020 and the AT49LV020 are 3-volt-only, 2 megabit Flash memories

organized as 262,144 words of 8 bits each. Manufactured with Atmel's advanced non-

volatile CMOS technology, the devices offer access times to 70 ns with power dissipa-

tion of just 90 mW over the commercial temperature range. When the device is dese-

lected, the CMOS standby current is less than 50

µA.

To allow for simple in-system reprogrammability, the AT49BV/LV020 does not require

high input voltages for programming. Three-volt-only commands determine the read

and programming operation of the device. Reading data out of the device is similar to

reading from an EPROM. Reprogramming the AT49BV/LV020 is performed by eras-

ing the entire 2 megabits of memory and then programming on a byte by byte basis.

The typical byte programming time is a fast 30

µs. The end of a program cycle can be

optionally detected by the DATA polling feature. Once the end of a byte program cycle

has been detected, a new access for a read or program can begin. The typical num-

ber of program and erase cycles is in excess of 10,000 cycles.

2-Megabit

(256K x 8)

Single 2.7-volt

Flash Memory

AT49BV020

AT49LV020

Rev. 0678C–03/98

(continued)

Pin Configuration

Pin Name

Function

A0 - A17

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

NC

No Connect

PLCC Top View

VSOP Top View (8 x 14mm) or

TSOP Top View (8 x 20mm)

Type 1