1

Features

– One 16K Byte Boot Block with Programming Lockout

– Two 8K Byte Parameter Blocks

– Two Main Memory Blocks (32K, 64K) Bytes

µµµµs/Byte Typical

– 25 mA Active Current

–50

µµµµA CMOS Standby Current

Description

The AT49BV/LV001(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory.

Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70

ns with power dissipation of just 90 mW over the commercial temperature range.

When the device is deselected, the CMOS standby current is less than 50

µA. For the

1-Megabit

(128K x 8)

Single 2.7-Volt

Flash Memory

AT49BV001

AT49LV001

AT49BV001N

AT49LV001N

AT49BV001T

AT49LV001T

AT49BV001NT

AT49LV001NT

Rev. 1110A–07/98

Pin Configurations

Pin Name

Function

A0 - A16

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

RESET

RESET

I/O0 - I/O7

Data Inputs/Outputs

DC

Don’t Connect

NC

No Connect

DIP Top View

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

*RESET

A16

A15

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O0

I/O1

I/O2

GND

VCC

WE

NC

A14

A13

A8

A9

A11

OE

A10

CE

I/O7

I/O6

I/O5

I/O4

I/O3

PLCC Top View

5

6

7

8

9

10

11

12

13

29

28

27

26

25

24

23

22

21

A7

A6

A5

A4

A3

A2

A1

A0

I/O0

A14

A13

A8

A9

A11

OE

A10

CE

I/O7

(continued)

VSOP Top View (8 x 14mm) or

TSOP Top View (8 x 20mm)

Type 1

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

A11

A9

A8

A13

A14

NC

WE

VCC

*RESET

A16

A15

A12

A7

A6

A5

A4

OE

A10

CE

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

A0

A1

A2

A3

*Note: This pin is a DC on the AT49BV001N(T) and AT49LV001N(T).