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AT45DB021-JC Datasheet(PDF) 16 Page - ATMEL Corporation |
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AT45DB021-JC Datasheet(HTML) 16 Page - ATMEL Corporation |
16 / 18 page ![]() AT45DB021 16 Figure 2. Algorithm for Randomly Modifying Data Notes: 1. To preserve data integrity, each page of the DataFlash memory array must be updated/rewritten at least once within every 10,000 cumulative page erase/program operations. 2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command must use the address specified by the Page Address Pointer. 3. Other algorithms can be used to rewrite portions of the Flash array. Low power applications may choose to wait until 10,000 cumulative page erase/program operations have accumulated before rewriting all pages of the Flash array. See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details. START MAIN MEMORY PAGE to BUFFER TRANSFER (53H, 55H) INCREMENT PAGE ADDRESS POINTER (2) Auto Page Rewrite (2) (58H, 59H) END provide address of page to modify If planning to modify multiple bytes currently stored within a page of the Flash array MAIN MEMORY PAGE PROGRAM (82H, 85H) BUFFER WRITE (84H, 87H) BUFFER to MAIN MEMORY PAGE PROGRAM (83H, 86H) |
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