DS90LV047A

SNLS044C – MAY 2000 – REVISED APRIL 2013

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Functional Diagram

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1)

−0.3V to +4V

Enable Input Voltage (EN, EN*)

−0.3V to +3.9V

Short Circuit Duration

Continuous

D0016A Package

1088 mW

PW0016A Package

866 mW

Maximum Package Power Dissipation @ +25°C

Derate D0016A Package

8.5 mW/°C above +25°C

Derate PW0016A Package

6.9 mW/°C above +25°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature Range

Soldering (4 sec.)

+260°C

Maximum Junction Temperature

+150°C

(HBM, 1.5 k

Ω, 100 pF)

≥ 10 kV

(EIAJ, 0

Ω, 200 pF)

≥ 1200 V

(1)

“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply

that the devices should be operated at these limits. Electrical Characteristics specifies conditions of device operation.

(2)

ESD Ratings:

HBM (1.5 k

Ω, 100 pF) ≥ 10 kV

EIAJ (0

Ω, 200 pF) ≥ 1200 V

Recommended Operating Conditions

Min

Typ

Max

Units

+3.0

+3.3

+3.6

V

−40

+25

+85

°C

2

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