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A420616 Datasheet(PDF) 3 Page - AMIC Technology

Part # A420616
Description  1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
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Manufacturer  AMICC [AMIC Technology]
Direct Link  http://www.amictechnology.com
Logo AMICC - AMIC Technology

A420616 Datasheet(HTML) 3 Page - AMIC Technology

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A420616 Series
PRELIMINARY
(June, 2002, Version 0.2)
2
AMIC Technology, Inc.
Selection Guide
Symbol
Description
-45
-50
Unit
tRAC
Maximum RAS Access Time
45
50
ns
tAA
Maximum Column Address Access Time
20
22
ns
tCAC
Maximum CAS Access Time
12
13
ns
tOEA
Maximum Output Enable ( OE ) Access Time
12
13
ns
tRC
Minimum Read or Write Cycle Time
76
84
ns
tPC
Minimum EDO Cycle Time
18
20
ns
Functional Description
The A420616 reads and writes data by multiplexing an 20-
bit address into a 10-bit row and 10-bit column address.
RAS and CAS are used to strobe the row address and the
column address, respectively.
The A420616 has two CAS inputs: LCAS controls I/O0-
I/O7, and
UCAS controls I/O8 - I/O15, UCAS and LCAS
function in an identical manner to CAS in that either will
generate an internal CAS signal. The CAS function and
timing are determined by the first CAS ( UCAS or
LCAS ) to transition low and by the last to transition high.
Byte Read and Byte Write are controlled by using LCAS
and
UCAS separately.
A Read cycle is performed by holding the WE signal high
during RAS / CAS operation. A Write cycle is executed by
holding the WE signal low during RAS / CAS operation;
the input data is latched by the falling edge of WE or
CAS , whichever occurs later. The data inputs and outputs
are routed through 16 common I/O pins, with RAS , CAS ,
WE and OE controlling the in direction.
EDO Page Mode operation all 1024(1K) columns within a
selected row to be randomly accessed at a high data rate.
A EDO Page Mode cycle is initiated with a row address
latched by RAS followed by a column address latched by
CAS . While holding RAS low, CAS can be toggled to
strobe changing column addresses, thus achieving shorter
cycle times.
The A420616 offers an accelerated Fast Page Mode cycle
through a feature called Extended Data Out, which keeps
the output drivers on during the CAS precharge time (tcp).
Since data can be output after CAS goes high, the user is
not required to wait for valid data to appear before starting
the next access cycle. Data-out will remain valid as long as
RAS and OE are low, and WE is high; this is the only
characteristic which differentiates Extended Data Out
operation from a standard Read or Fast Page Read.
A memory cycle is terminated by returning both RAS and
CAS high. Memory cell data will retain its correct state by
maintaining
power
and
accessing
all
1024(1K)
combinations of the 10-bit row addresses, regardless of
sequence, at least once every 16ms through any RAS
cycle (Read, Write) or RAS Refresh cycle ( RAS -only,
CBR, or Hidden). The CBR Refresh cycle automatically
controls the row addresses by invoking the refresh counter
and controller.
Power-On
The initial application of the VCC supply requires a 200 µs
wait followed by a minimum of any eight initialization cycles
containing a RAS clock. During Power-On, the VCC
current is dependent on the input levels of RAS and CAS .
It is recommended that RAS and CAS track with VCC or
be held at a valid VIH during Power-On to avoid current
surges.


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