A420616 datasheet(8/25 Pages) AMICC

Part #	A420616

Description	1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

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Manufacturer	AMICC [AMIC Technology]

Direct Link	http://www.amictechnology.com

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A420616 Series

PRELIMINARY

(June, 2002, Version 0.2)

7

AMIC Technology, Inc.

AC Characteristics (continued) (VCC = 5.0V

± 10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)

Test Conditions:

Input timing reference level: VIH/VIL=2.4V/0.8V

Output reference level: VOH/VOL=2.0V/0.8V

Output Load: 2TTL gate + CL (50pF)

Assumed tT=2ns

-45

-50

#

Std

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

Notes

20

tRRH

Read Command Hold Time Reference to RAS

0

-

0

-

ns

9

21

tRAL

Column Address to RAS Lead Time

20

-

22

-

ns

22

tCOH

Output Hold After CAS Low

2

-

3

-

ns

23

tOFF

Output Buffer Turn-Off Delay Time

-

2

-

3

ns

8, 10

24

tASC

Column Address Setup Time

0

-

0

-

ns

25

tCAH

Column Address Hold Time

7

-

8

-

ns

26

tOES

OE Low to CAS High Set Up

10

-

10

-

ns

27

tWCS

Write Command Setup Time

0

-

0

-

ns

11

28

tWCH

Write Command Hold Time

7

-

8

-

ns

11

29

tWCR

Write Command Hold Time to RAS

40

-

45

-

ns

30

tWP

Write Command Pulse Width

7

-

8

-

ns

31

tRWL

Write Command to RAS Lead Time

12

-

13

-

ns

32

tCWL

Write Command to CAS Lead Time

7

-

8

-

ns

33

tDS

Data-in setup Time

0

-

0

-

ns

12

34

tDH

Data-in Hold Time

7

-

8

-

ns

12

35

tDHR

Data-in Hold Time to RAS

40

-

45

-

ns

36

tRWC

Read-Modify-Write Cycle Time

104

-

114

-

ns

37

tRWD

RAS to WE Delay Time (Read-Modify-Write)

59

-

65

-

ns

11

38

tCWD

CAS to WE Delay Time (Read-Modify-Write)

26

-

28

-

ns

11

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