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Am29LV800B

P R E L I M I NARY

REVISION SUMMARY FOR AM29LV800B

Revision E

Distinctive Characteristics

Changed typical read and program/erase current spec-

ifications.

Device now has a guaranteed minimum endurance of

1,000,000 write cycles.

Figure 1, In-System Sector Protect/Unprotect

Algorithm

Corrected A6 to 0, Changed wait specification to 150

µ

s on sector protect and 15 ms on sector unprotect.

DC Characteristics

Changed typical read and program/erase current spec-

ifications.

AC Characteristics

Alternate CE# Controlled Erase/Program Operations:

options.

Erase and Programming Performance

Device now has a guaranteed minimum endurance of

1,000,000 write cycles.

Physical Dimensions

Corrected dimensions for package length and width in

FBGA illustration (standalone data sheet version).

Revision E+1

Figure 2, In-System Sector Protect/Unprotect

Algorithms

In the sector protect algorithm, added a “Reset

PLSCNT=1” box in the path from “Protect another sec-

tor?” back to setting up the next sector address.

DC Characteristics

listed current.

AC Characteristics

Erase/Program Operations; Alternate CE# Controlled

Erase/Program Operations: Corrected the notes refer-

This parameter is not 100% tested.

Temporary Sector Unprotect Table

100% tested.

Figure 23, Sector Protect/Unprotect Timing

Diagram

A valid address is not required for the first write cycle;

only the data 60h.

Erase and Programming Performance

In Note 2, the worst case endurance is now 1 million cy-

cles.

Trademarks

Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.