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CSTLS4M19G56-B0 Datasheet(PDF) 24 Page - Murata Manufacturing Co., Ltd. |
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CSTLS4M19G56-B0 Datasheet(HTML) 24 Page - Murata Manufacturing Co., Ltd. |
24 / 32 page ![]() 22 Note • Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering. 5 5 Characteristics of CERALOCK® Oscillation Circuit 3. Characteristics of Oscillation Rise Time Oscillation rise time means the time when oscillation develops from a transient area to a steady state condition, at the time the power of the IC is activated. With a CERALOCK®, this is defined as the time to reach 90% of the oscillation level under steady state conditions as shown in Fig. 5-3. Rise time is primarily a function of the oscillation circuit design. Generally, smaller loading capacitance, higher frequency of ceramic resonator, and lower mechanical Q of ceramic resonator cause a faster rise time. The effect of load capacitance becomes more apparent as the capacitance of the resonator decreases. Fig. 5-4 shows how the rise time increases as the load capacitance of the resonator increases. Also, Fig. 5-4 shows how the rise time varies with supply voltage. It is noteworthy that the rise time of the ceramic resistor is one or two decades faster than a quartz crystal. Fig. 5-5 shows comparison of rise time between the two. Fig. 5-3 Definition of Rise Time t=0 0.9ⅹVp-p 0V ON VDD Vp-p Rise Time Time Fig. 5-4 Examples of Characteristics of Oscillation Rise Time (IC: TC74HCU04 (TOSHIBA), CERALOCK®: CSACW33M8X51–B0) Supply Voltage Characteristics CL (CL1 = CL2) Characteristics 2 0 0.50 1.00 468 VDD (V) 0 0 0.50 1.00 110 100 CL (pF) VDD = +5V Fig. 5-5 Comparison of the Rise Time of a Ceramic Resonator vs. a Quartz Crystal CRYSTAL (33.868MHz) CSACW33M8X51–B0 IC : TC74HCU04AP(TOSHIBA) VDD=+5V, CL1=CL2=6pF ↑ 2.0V/div. →0.1msec./div. P17E.pdf 2012.10.31 |
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