MTP75N06HD datasheet(3/8 Pages) MOTOROLA

Part #	MTP75N06HD

Description	TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS

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Manufacturer	MOTOROLA [Motorola, Inc]

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MTP75N06HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (°C)

ID, DRAIN CURRENT (AMPS)

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0

0.5

1

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

0

50

150

Figure 3. On–Resistance versus Drain Current

and Temperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1

1000

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

VDS ≥ 10 V

TJ = – 55°C

25

°C

– 50

– 25

0

25

50

75

100

125

150

0

10

20

60

40

VGS = 0 V

TJ = 125°C

TJ = 25°C

VGS = 10 V

ID = 37.5 A

100

30

9 V

TJ = 25°C

100

°C

25

75

15 V

150

0

2

1.5

100

°C

0.016

0.012

0.009

0.007

0.006

1.9

1.6

1.3

1

0.7

2

5

4

7

3

6

8

125

100

75

50

25

VGS = 10 V

8 V

7 V

6 V

5 V

150

0

125

100

75

50

25

0.014

0.012

0.010

0.008

0.006

0.004

100

125

TJ = 25°C

VGS = 10 V

TJ = 100°C

25

°C

– 55

°C

VGS = 10 V

0.010

0.008

0

50

150

25

75

100

125

10

50

25

°C

0.011

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Manufacturer	Part #	Datasheet	Description
Motorola, Inc	MTP55N06Z	143Kb / 6P	TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
	MTP75N03HDL	235Kb / 8P	TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS
	MTD20P06HDL	308Kb / 12P	TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
	MTP1302	166Kb / 8P	TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
	MTB75N06HD	342Kb / 12P	TMOS POWER FET 75 AMPERES 60 VOLTS
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