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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

HDTMOS E-FET™

High Density Power FET

N–Channel Enhancement–Mode Silicon Gate

This advanced high–cell density HDTMOS E–FET is designed to

withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain–to–source

diode with a fast recovery time. Designed for low–voltage,

high–speed switching applications in power supplies, converters

and PWM motor controls, and inductive loads. The avalanche

energy capability is specified to eliminate the guesswork in designs

where inductive loads are switched, and to offer additional safety

margin against unexpected voltage transients.

• Ultra Low RDS(on), High–Cell Density, HDTMOS

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

• Avalanche Energy Specified

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

60

Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ)

VDGR

60

Vdc

Gate–Source Voltage — Continuous

VGS

± 20

± 30

Vdc

Vpk

Drain Current — Continuous

°C

ID

ID

IDM

75

50

225

Adc

Apk

Total Power Dissipation

Derate above 25

°C

PD

150

1.0

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 175

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, IL = 75 Apk, L = 0.177 mH, RG = 25 Ω)

EAS

500

mJ

Thermal Resistance — Junction to Case

R

θJC

R

θJA

1.0

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET, Designer’s and HDTMOS are trademarks of Motorola, Inc.

TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Order this document

by MTP75N06HD/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MTP75N06HD

TMOS POWER FET

75 AMPERES

RDS(on) = 10.0 mOHM

60 VOLTS

Motorola Preferred Device

™

D

S

G

CASE 221A–06, Style 5

TO–220AB