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MCP1640T-IMC Datasheet(PDF) 3 Page - Microchip Technology |
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MCP1640T-IMC Datasheet(HTML) 3 Page - Microchip Technology |
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3 / 32 page  2010 Microchip Technology Inc. DS22234A-page 3 MCP1640/B/C/D 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † EN, FB, VIN, VSW, VOUT - GND ...........................+6.5V EN, FB ........... <greater of VOUT or VIN > (GND - 0.3V) Output Short Circuit Current....................... Continuous Output Current Bypass Mode........................... 400 mA Power Dissipation ............................ Internally Limited Storage Temperature .........................-65oC to +150oC Ambient Temp. with Power Applied......-40oC to +85oC Operating Junction Temperature........-40oC to +125oC ESD Protection On All Pins: HBM........................................................ 3 kV MM........................................................ 300 V † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT =3.3V, IOUT =15 mA, TA = +25°C. Boldface specifications apply over the TA range of -40 oC to +85oC. Parameters Sym Min Typ Max Units Conditions Input Characteristics Minimum Start-Up Voltage VIN —0.65 0.8 VNote 1 Minimum Input Voltage After Start-Up VIN —0.35 — V Note 1 Output Voltage Adjust Range VOUT 2.0 5.5 VVOUT VIN; Note 2 Maximum Output Current IOUT 100 150 — mA 1.2V VIN, 2.0V VOUT 150 — mA 1.5V VIN, 3.3V VOUT 350 — mA 3.3V VIN, 5.0V VOUT Feedback Voltage VFB 1.175 1.21 1.245 V— Feedback Input Bias Current IVFB —10 — pA — Quiescent Current – PFM Mode IQPFM — 19 30 µA Measured at VOUT = 4.0V; EN = VIN, IOUT = 0 mA; Note 3 Quiescent Current – PWM Mode IQPWM — 220 — µA Measured at VOUT; EN = VIN IOUT = 0 mA; Note 3 Quiescent Current – Shutdown IQSHDN —0.7 2.3 µA VOUT = EN = GND; Includes N-Channel and P-Channel Switch Leakage NMOS Switch Leakage INLK —0.3 1 µA VIN =VSW =5V; VOUT = 5.5V VEN =VFB =GND PMOS Switch Leakage IPLK — 0.05 0.2 µA VIN =VSW = GND; VOUT =5.5V NMOS Switch ON Resistance RDS(ON)N —0.6 — VIN = 3.3V, ISW = 100 mA PMOS Switch ON Resistance RDS(ON)P —0.9 — VIN = 3.3V, ISW = 100 mA Note 1: 3.3 K resistive load, 3.3V OUT (1 mA). 2: For VIN > VOUT, VOUT will not remain in regulation. 3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)). 4: 220 resistive load, 3.3V OUT (15 mA). 5: Peak current limit determined by characterization, not production tested. |
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