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1

Specifications subject to change without notice. 6/99A

Ka Band Power GaAs MESFET Chips

Features

s 22 dBm Output Power @ 18 GHz

s High Associated Gain, 9 dB @ 18 GHz

s High Power Added Efficiency, 23%

s Broadband Operation, DC–18 GHz

s 0.25

µm Ti/Pd/Au Gates

s Passivated Surface

Description

The AFM06P3-212, 213 are high performance power

GaAs MESFET chips in an industry standard ceramic

micro-x package, having a gate length of 0.25

µm and a

total gate periphery of 600

µm. These devices have

excellent gain and power performance through 26 GHz,

making them suitable for a wide range of commercial and

military applications in oscillator and amplifier circuits. They

employ Ti/Pd/Au gate metallization and surface

passivation to ensure a rugged, reliable part.

AFM06P3-212, AFM06P3-213

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

130.0

200.0

270.0

mA

Transconductance (gm)

90.0

120.0

mS

1.0

3.0

5.0

V

Gate to Drain Breakdown

8.0

12.0

V

Output Power at 1 dB

22.0

dBm

9.0

dB

Power Added Efficiency (

ηadd)

23.0

%

Electrical Specifications at 25°C

Source

Gate

Source

Drain

Drain

Source

Gate

Source

212

213

Characteristic

Value

6 V

-4 V

1 mA

1.1 W

-65 to +150°C

175°C

Absolute Maximum Ratings