NVTR0202PLT1G datasheet(2/5 Pages) ONSEMI

Part #	NVTR0202PLT1G

Description	Power MOSFET ??0 V, ??00 mA, P?묬hannel SOT??3 Package

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NTR0202PL, NVTR0202PL

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 V, ID = −10 mA)

(Positive Temperature Coefficient)

V(BR)DSS

−20

33

V

mV/°C

Zero Gate Voltage Drain Current

(VDS = −20 V, VGS = 0 V, TJ = 25°C)

(VDS = −20 V, VGS = 0 V, TJ = 150°C)

IDSS

−1.0

−10

mA

Gate−Body Leakage Current (VGS = ± 20 V, VDS = 0 V)

IGSS

±100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = −250 mA)

(Negative Temperature Coefficient)

VGS(th)

−1.1

−1.9

3.0

−2.3

V

mV/°C

Static Drain−to−Source On−Resistance

(VGS = −10 V, ID = −200 mA)

(VGS = −4.5 V, ID = −50 mA)

RDS(on)

0.55

0.80

1.10

W

Forward Transconductance

(VDS = −10 V, ID = −200 mA)

gfs

0.5

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = −5.0 V, VGS = 0 V,

F = 1.0 MHz)

Ciss

70

pF

Output Capacitance

Coss

74

Reverse Transfer Capacitance

Crss

26

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

(VDD = −15 V, ID = −200 mA,

VGS = −10 V, RG = 6.0 W)

td(on)

3.0

ns

Rise Time

tr

6.0

Turn−Off Delay Time

td(off)

18

Fall Time

tf

4

Total Gate Charge

(VDS = −15 V, ID = −200 mA,

VGS = −10 V)

QTOT

2.18

nC

Gate−Source Charge

QGS

0.41

Gate−Drain Charge

QGD

0.40

BODY−DRAIN DIODE CHARACTERISTICS (Note 2)

Diode Forward Voltage (Note 2)

(IS = −400 mA, VGS = 0 V)

(IS = −400 mA, VGS = 0 V, TJ = 150°C)

VSD

−0.8

−0.65

−1.0

V

Reverse Recovery Time

(IS = −1.0 A, VGS = 0 V,

dIS/dt = 100 A/ms)

trr

11.8

ns

ta

9

tb

3

Reverse Recovery Stored Charge

(IS = −1.0 A, VGS = 0 V,

dIS/dt = 100 A/ms)

QRR

0.007

mC

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

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