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MTP36N06V Datasheet(PDF) 6 Page - Motorola, Inc |
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MTP36N06V Datasheet(HTML) 6 Page - Motorola, Inc |
6 / 8 page MTP36N06V 6 Motorola TMOS Power MOSFET Transistor Device Data SAFE OPERATING AREA Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.1 100 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 VGS = 20 V SINGLE PULSE TC = 25°C 1 Figure 13. Thermal Response R θJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) R θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 Figure 14. Diode Reverse Recovery Waveform di/dt trr ta tp IS 0.25 IS TIME IS tb 10 100 1000 1 dc 100 µs 1 ms 10 ms 10 µs t, TIME (s) 1.00 0.10 0.01 0.2 D = 0.5 0.05 0.01 SINGLE PULSE 0.1 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01 0.02 TJ, STARTING JUNCTION TEMPERATURE (°C) 25 50 75 100 125 ID = 32 A 150 0 175 50 25 225 75 100 125 150 200 175 |
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