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N2222A Datasheet(PDF) 1 Page - Kwang Myoung I.S. CO.,LTD |
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N2222A Datasheet(HTML) 1 Page - Kwang Myoung I.S. CO.,LTD |
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1 / 1 page  K I SEMICONDUCTOR █ APPLICATIONS General Purpose Transistors. █ ABSOLUTE MAXIMUM RATINGS（T a=25℃） █ ELECTRICAL CHARACTERISTICS（T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 75 V IC=10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 40 V IC=10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 6 V IE=10μA，IC=0 HFE DC Current Gain 100 400 VCE=10V, IC=150mA VCE(sat) Collector- Emitter Saturation Voltage 0.3 V IC=150mA, IB=15mA ICBO Collector Cut-off Current 10 nA VCB=60V, IE=0 IEBO Emitter Cut-off Current 10 nA VEB=3V, IC=0 fT Current Gain-Bandwidth Product 300 MHz VCE=20V, IC=20mA Cob Output Capacitance 8 pF VCB=10V, IE=0，f=1MHz Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage………………………………75V VCEO——Collector-Emitter Voltage……………………………40V VEBO——Emitter-Base Voltage………………………………6V IC——Collector Current……………………………………600mA 1―Emitter，E 2―Base，B 3―Collector，C TO-92 N2222A NPN S ILIC ON TRANS ISTOR |
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