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LM837MX Datasheet(PDF) 3 Page - Texas Instruments |
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LM837MX Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 16 page  LM837 www.ti.com SNOSBZ6C – MAY 1999 – REVISED MARCH 2013 DESIGN ELECTRICAL CHARACTERISTICS TA= 25°C, VS=±15V (1) Symbol Parameter Condition Min Typ Max Units PBW Power Bandwidth VO = 25 VP-P, RL = 600Ω, 200 kHz THD < 1% en1 Equivalent Input Noise Voltage JIS A, RS = 100Ω 0.5 μV en2 Equivalent Input Noise Voltage f = 1 kHz 4.5 nV/ √Hz in Equivalent Input Noise Current f = 1 kHz 0.7 pA/ √Hz THD Total Harmonic Distortion AV = 1, VOUT = 3 Vrms, 0.0015 % f = 20 ∼ 20 kHz, RL = 600Ω fU Zero Cross Frequency Open Loop 12 MHz φm Phase Margin Open Loop 45 deg Input-Referred Crosstalk f = 20 ∼ 20 kHz −120 dB ΔVOS/Δ Average TC of Input Offset Voltage 2 μV/°C T (1) The following parameters are not tested or ensured. Copyright © 1999–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM837 |
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