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INA141UG4 Datasheet(PDF) 2 Page - Texas Instruments

Part # INA141UG4
Description  Precision, Low Power, G = 10, 100 INSTRUMENTATION AMPLIFIER
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

INA141UG4 Datasheet(HTML) 2 Page - Texas Instruments

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®
INA141
2
SPECIFICATIONS
At T
A = +25°C, VS = ±15V, and RL = 10kΩ, unless otherwise noted.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
INA141P, U
INA141PA, UA
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INPUT
Offset Voltage, RTI
G = 100
±20
±50
T
±125
µV
G = 10
±50
±100
T
±250
µV
vs Temperature
G = 100
±0.2
±0.5
T
±1.5
µV/°C
G = 10(2)
±0.5
±2
T
±2.5
µV/°C
vs Power Supply
VS = ±2.25 to ±18V, G = 100
±0.4
±1
T
±3
µV/V
G = 10
±2
±10
T
±20
µV/V
Long-Term Stability
G = 100
0.2
T
µV/mo
G = 10
0.5
T
µV/mo
Impedance, Differential
1010 || 2
T
Ω || pF
Common-Mode
1010 || 9
T
Ω || pF
Common-Mode Voltage Range(1)
VO = 0V
(V+) – 2
(V+) – 1.4
TT
V
(V–) + 2
(V–) + 1.7
TT
V
Safe Input Voltage
±40
T
V
Common-Mode Rejection
VCM = ±13V, ∆RS = 1kΩ
G = 100
117
125
110
120
dB
G = 10
100
106
93
100
dB
BIAS CURRENT
±2
±5
T
±10
nA
vs Temperature
±30
T
pA/
°C
Offset Current
±1
±5
T
±10
nA
vs Temperature
±30
T
pA/
°C
NOISE VOLTAGE, RTI
f = 10Hz
G = 100, RS = 0Ω
10
T
nV/
√Hz
f = 100Hz
8
T
nV/
√Hz
f = 1kHz
8
T
nV/
√Hz
fB = 0.1Hz to 10Hz
0.2
T
µVp-p
f = 10Hz
G = 10, RS = 0Ω
22
T
nV/
√Hz
f = 100Hz
13
T
nV/
√Hz
f = 1kHz
12
T
nV/
√Hz
fB = 0.1Hz to 10Hz
0.6
T
µVp-p
Noise Current
f = 10Hz
0.9
T
pA/
√Hz
f = 1kHz
0.3
T
pA/
√Hz
fB = 0.1Hz to 10Hz
30
T
pAp-p
GAIN
Gain Error
VO = ±13.6V, G = 100
±0.03
±0.075
T
±0.15
%
G = 10
±0.01
±0.05
T
±0.15
%
Gain vs Temperature(2)
G = 10, 100
±2
±10
TT
ppm/
°C
Nonlinearity
G = 100
±0.0005
±0.002
T
±0.004
% of FSR
G = 10
±0.0003
±0.001
T
±0.002
% of FSR
OUTPUT
Voltage: Positive
RL = 10kΩ
(V+) – 1.4
(V+) – 0.9
TT
V
Negative
RL = 10kΩ
(V–) + 1.4
(V–) + 0.9
TT
V
Load Capacitance Stability
1000
T
pF
Short-Circuit Current
+6/–15
T
mA
FREQUENCY RESPONSE
Bandwidth, –3dB
G = 100
200
T
kHz
G = 10
1
T
MHz
Slew Rate
VO = ±10V, G = 10
4
T
V/
µs
Settling Time, 0.01%
VO = ±5V, G = 100
9
T
µs
G = 10
7
T
µs
Overload Recovery
50% Overdrive
4
T
µs
POWER SUPPLY
Voltage Range
±2.25
±15
±18
TT
T
V
Current, Total
VIN = 0V
±750
±800
TT
µA
TEMPERATURE RANGE
Specification
–40
85
TT
°C
Operating
–40
125
TT
°C
θ
JA
8-Pin DIP
80
T
°C/W
SO-8 SOIC
150
T
°C/W
T Specification same as INA141P, U.
NOTE: (1) Input common-mode range varies with output voltage—see typical curves. (2) Guaranteed by wafer test.


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