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INA141UG4 Datasheet(PDF) 2 Page - Texas Instruments |
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INA141UG4 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 14 page ® INA141 2 SPECIFICATIONS At T A = +25°C, VS = ±15V, and RL = 10kΩ, unless otherwise noted. The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. INA141P, U INA141PA, UA PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS INPUT Offset Voltage, RTI G = 100 ±20 ±50 T ±125 µV G = 10 ±50 ±100 T ±250 µV vs Temperature G = 100 ±0.2 ±0.5 T ±1.5 µV/°C G = 10(2) ±0.5 ±2 T ±2.5 µV/°C vs Power Supply VS = ±2.25 to ±18V, G = 100 ±0.4 ±1 T ±3 µV/V G = 10 ±2 ±10 T ±20 µV/V Long-Term Stability G = 100 0.2 T µV/mo G = 10 0.5 T µV/mo Impedance, Differential 1010 || 2 T Ω || pF Common-Mode 1010 || 9 T Ω || pF Common-Mode Voltage Range(1) VO = 0V (V+) – 2 (V+) – 1.4 TT V (V–) + 2 (V–) + 1.7 TT V Safe Input Voltage ±40 T V Common-Mode Rejection VCM = ±13V, ∆RS = 1kΩ G = 100 117 125 110 120 dB G = 10 100 106 93 100 dB BIAS CURRENT ±2 ±5 T ±10 nA vs Temperature ±30 T pA/ °C Offset Current ±1 ±5 T ±10 nA vs Temperature ±30 T pA/ °C NOISE VOLTAGE, RTI f = 10Hz G = 100, RS = 0Ω 10 T nV/ √Hz f = 100Hz 8 T nV/ √Hz f = 1kHz 8 T nV/ √Hz fB = 0.1Hz to 10Hz 0.2 T µVp-p f = 10Hz G = 10, RS = 0Ω 22 T nV/ √Hz f = 100Hz 13 T nV/ √Hz f = 1kHz 12 T nV/ √Hz fB = 0.1Hz to 10Hz 0.6 T µVp-p Noise Current f = 10Hz 0.9 T pA/ √Hz f = 1kHz 0.3 T pA/ √Hz fB = 0.1Hz to 10Hz 30 T pAp-p GAIN Gain Error VO = ±13.6V, G = 100 ±0.03 ±0.075 T ±0.15 % G = 10 ±0.01 ±0.05 T ±0.15 % Gain vs Temperature(2) G = 10, 100 ±2 ±10 TT ppm/ °C Nonlinearity G = 100 ±0.0005 ±0.002 T ±0.004 % of FSR G = 10 ±0.0003 ±0.001 T ±0.002 % of FSR OUTPUT Voltage: Positive RL = 10kΩ (V+) – 1.4 (V+) – 0.9 TT V Negative RL = 10kΩ (V–) + 1.4 (V–) + 0.9 TT V Load Capacitance Stability 1000 T pF Short-Circuit Current +6/–15 T mA FREQUENCY RESPONSE Bandwidth, –3dB G = 100 200 T kHz G = 10 1 T MHz Slew Rate VO = ±10V, G = 10 4 T V/ µs Settling Time, 0.01% VO = ±5V, G = 100 9 T µs G = 10 7 T µs Overload Recovery 50% Overdrive 4 T µs POWER SUPPLY Voltage Range ±2.25 ±15 ±18 TT T V Current, Total VIN = 0V ±750 ±800 TT µA TEMPERATURE RANGE Specification –40 85 TT °C Operating –40 125 TT °C θ JA 8-Pin DIP 80 T °C/W SO-8 SOIC 150 T °C/W T Specification same as INA141P, U. NOTE: (1) Input common-mode range varies with output voltage—see typical curves. (2) Guaranteed by wafer test. |
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