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TPD4144AK Datasheet(PDF) 9 Page - Toshiba Semiconductor |
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TPD4144AK Datasheet(HTML) 9 Page - Toshiba Semiconductor |
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9 / 23 page  TPD4144AK 2012-02-15 9 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit VBB ⎯ 50 280 450 Operating power supply voltage VCC ⎯ 13.5 15 16.5 V IBB VBB = 450 V ⎯ ⎯ 0.5 Current dissipation ICC VCC = 15 V ⎯ 0.8 5 mA IBS (ON) VBS = 15 V, high side ON ⎯ 210 410 Bootstrap Current dissipation IBS (OFF) VBS = 15 V, high side OFF ⎯ 180 370 μA VIH VIN = “H”, VCC = 15 V 2.5 ⎯ ⎯ Input voltage VIL VIN = “L” , VCC = 15 V ⎯ ⎯ 1.5 V SD input voltage VSD VCC = 15 V ⎯ 2.5 ⎯ V IIH VIN = 5 V ⎯ ⎯ 150 Input current IIL VIN = 0 V ⎯ ⎯ 100 μA ISDH VIN = 5 V ⎯ ⎯ 100 SD Input current ISDL VIN = 0 V ⎯ ⎯ 150 μA VCEsatH VCC = 15 V, IC = 1 A, high side ⎯ 2.3 3.2 Output saturation voltage VCEsatL VCC = 15 V, IC = 1 A, low side ⎯ 2.3 3.2 V VFH IF = 1 A, high side ⎯ 2.1 3.1 FRD forward voltage VFL IF = 1 A, low side ⎯ 2.1 3.1 V BSD forward voltage VF (BSD) IF = 500 μA ⎯ 0.8 1.2 V Regulator voltage VREG VCC = 15 V, IREG = 30 mA 6.5 7 7.5 V Thermal shutdown temperature TSD VCC = 15 V 135 ⎯ 185 °C Thermal shutdown hysteresis ΔTSD VCC = 15 V ⎯ 50 ⎯ °C VCC under voltage protection VCCUVD ⎯ 10 11 12 V VCC under voltage protection recovery VCCUVR ⎯ 10.5 11.5 12.5 V VBS under voltage protection VBSUVD ⎯ 8 9 9.5 V VBS under voltage protection recovery VBSUVR ⎯ 8.5 9.5 10.5 V DIAG saturation voltage VDIAGsat IDIAG = 5 mA ⎯ ⎯ 0.5 V Output on delay time ton VBB = 280 V, VCC = 15 V, IC = 1 A ⎯ 1.2 3 μs Output off delay time toff VBB = 280 V, VCC = 15 V, IC = 1 A ⎯ 1 3 μs Dead time tdead VBB = 280 V, VCC = 15 V, IC = 1 A 1.4 ⎯ ⎯ μs FRD reverse recovery time trr VBB = 280 V, VCC = 15 V, IC = 1 A ⎯ 150 ⎯ ns |
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