2SC2878

2007-11-01

1

TOSHIBA Transistor

Silicon NPN Epitaxial Type

2SC2878

For Muting and Switching Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

20

V

Emitter-base voltage

25

V

Collector current

300

mA

Base current

60

mA

Collector power dissipation

400

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

0.1

μA

Emitter cut-off current

⎯

⎯

0.1

μA

DC current gain

(Note)

200

⎯

1200

Collector-emitter saturation voltage

⎯

0.042

0.1

V

Base-emitter voltage

⎯

0.61

⎯

V

Transition frequency

⎯

30

⎯

MHz

Collector output capacitance

⎯

4.8

7

pF

Turn-on time

⎯

160

⎯

Storage time

⎯

500

⎯

Switching time

Fall time

⎯

130

⎯

ns

Unit: mm

JEDEC

TO-92

JEITA

SC-43

TOSHIBA

2-5F1B

Weight: 0.21 g (typ.)