IXTP08N100D2 datasheet(1/5 Pages) IXYS

Part #	IXTP08N100D2

Description	Depletion Mode MOSFET

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Manufacturer	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Maximum Ratings

V

DSX

T

J

= 25

°C to 150°C

1000

V

GSX

Continuous

±20

V

GSM

Transient

±30

V

P

D

T

C = 25°C60

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-252

0.35

g

TO-263

2.50

g

TO-220

3.00

g

DS100182A(12/09)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSX

V

GS = - 5V, ID = 25μA

1000

V

GS(off)

V

DS = 25V, ID = 25μA

- 2.0

- 4.0

V

I

GSX

V

GS = ±20V, VDS = 0V

±50 nA

I

DSX(off)

V

DS = VDSX, VGS= - 5V

1

μA

T

J = 125°C

15

μA

R

DS(on)

V

GS = 0V, ID = 400mA, Note 1

21

Ω

I

D(on)

V

GS = 0V, VDS = 50V, Note 1

800

mA

Depletion Mode

MOSFET

N-Channel

IXTY08N100D2

IXTA08N100D2

IXTP08N100D2

V

DSX

=

1000V

I

D(on)

>

800mA

R

DS(on) ≤

≤≤≤≤

21

Ω

Features

• Normally ON Mode

• International Standard Packages

• Molding Epoxies Meet UL94V-0

Flammability Classification

Advantages

• Easy to Mount

• Space Savings

• High Power Density

Applications

• Audio Amplifiers

• Start-up Circuits

• Protection Circuits

• Ramp Generators

• Current Regulators

• Active Loads

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-252 (IXTY)

TO-263 AA (IXTA)

G D

S

TO-220AB (IXTP)

D (Tab)

G

S

D (Tab)

G

S

D (Tab)

Preliminary Technical Information

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IXTP08N100D2 Datasheet(PDF) 1 Page - IXYS Corporation

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