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S9014 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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S9014 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted hFE Classification Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 450 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100µA, IE =0 50 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 45 V BVEBO Emitter-Base Breakdown Voltage IE =100µA, IC =0 5 V ICBO Collector Cut-off Current VCB =50V, IE =0 50 nA IEBO Emitter Cut-off Current VEB =5V, IC =0 50 nA hFE DC Current Gain VCE =5V, IC =1mA 60 280 1000 VCE (sat) Collector-Base Saturation Voltage IC =100mA, IB =5mA 0.14 0.3 VBE (sat) Base-Emitter Saturation Voltage IC =100mA, IB =5mA 0.84 1.0 V VBE (on) Base-Emitter On Voltage VCE =5V, IC =2mA 0.58 0.63 0.7 V Cob Output Capacitance VCB =10V, IE =0 f=1MHz 2.2 3.5 pF fT Current Gain Bandwidth Product VCE =5V, IC =10mA 150 270 MHz NF Noise Figure VCE =5V, IC =0.2mA f=1KHz, RS=2KΩ 0.9 10 dB Classification A B C D hFE 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000 1. Emitter 2. Base 3. Collector SS9014 Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT=450mW) • High hFE and good linearity • Complementary to SS9015 TO-92 1 |
Similar Part No. - S9014 |
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Similar Description - S9014 |
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