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IRF1404 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRF1404 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 8 page  IRF1404 Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 162 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 115 A IDM Pulsed Drain Current 650 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 519 mJ IAR Avalanche Current 95 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range -55 to + 175 Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance VDSS = 40V RDS(on) = 0.004Ω ID = 162A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description 10/20/00 1 TO-220AB www.kersemi.com |
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