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N2222A Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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N2222A Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS (except MMPQ2222 and NMT2222) fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz 300 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 8.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 25 pF rb’CC Collector Base Time Constant IC = 20 mA, VCB = 20 V, f = 31.8 MHz 150 pS NF Noise Figure IC = 100 µA, V CE = 10 V, RS = 1.0 k Ω, f = 1.0 kHz 4.0 dB Re(hie) Real Part of Common-Emitter High Frequency Input Impedance IC = 20 mA, VCE = 20 V, f = 300 MHz 60 Ω SWITCHING CHARACTERISTICS (except MMPQ2222 and NMT2222) *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, I E = 0 75 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, I C = 0 6.0 V ICEX Collector Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V 10 nA ICBO Collector Cutoff Current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150 °C 0.01 10 µA µA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 10 nA IBL Base Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V 20 nA hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = -55 °C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* 35 50 75 35 100 50 40 300 VCE(sat) Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.3 1.0 V V VBE(sat) Base-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.6 1.2 2.0 V V td Delay Time VCC = 30 V, VBE(OFF) = 0.5 V, 10 ns tr Rise Time IC = 150 mA, IB1 = 15 mA 25 ns ts Storage Time VCC = 30 V, IC = 150 mA, 225 ns tf Fall Time IB1 = IB2 = 15 mA 60 ns NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10) NPN General Purpose Amplifier (continued) |
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