May 2011

©2011 Fairchild Semiconductor Corporation

FDT86244 Rev.C

www.fairchildsemi.com

1

FDT86244

150 V, 2.8 A, 128 m

Ω

Features

High power and current handling capability in a widely used

surface mount package

Fast switching speed

100% UIL Tested

RoHS Compliant

General Description

This

N-Channel

MOSFET

is

produced using Fairchild

been

optimized

for

ruggedness.

Applications

Load Switch

Primary Switch

G

D

S

D

SOT-223

S

G

D

D

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

150

V

Gate to Source Voltage

±20

V

Drain Current -Continuous

(Note 1a)

2.8

A

-Pulsed

12

Single Pulse Avalanche Energy

(Note 3)

12

mJ

Power Dissipation

(Note 1a)

2.2

W

Power Dissipation

(Note 1b)

1.0

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

(Note 1)

12

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

55

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

86244

FDT86244

SOT-223

13 ’’

12 mm

2500 units