FGH30N120FTDTU datasheet(2/9 Pages) FAIRCHILD

Part #	FGH30N120FTDTU

Description	Field stop trench technology

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FGH30N120FTD

Rev. A

Package Marking and Ordering Information

Electrical Characteristics of the IGBT T

C = 25°C unless otherwise noted

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FGH30N120FTD

FGH30N120FTDTU

TO-247

-

30

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

BVCES

Collector to Emitter Breakdown Voltage

VGE = 0V, IC = 250µA

1200

-

V

ICES

Collector Cut-Off Current

VCE = VCES, VGE = 0V

-

1

mA

IGES

G-E Leakage Current

VGE = VGES, VCE = 0V

-

±250

nA

On Characteristics

VGE(th)

G-E Threshold Voltage

IC = 30mA, VCE = VGE

3.5

6

7.5

V

VCE(sat)

Collector to Emitter Saturation Voltage

IC = 30A, VGE = 15V

-1.6

2

V

IC = 30A, VGE = 15V,

TC = 125

oC

-2.0

-

V

Dynamic Characteristics

Cies

Input Capacitance

VCE = 30V, VGE = 0V,

f = 1MHz

-

5140

-

pF

Coes

Output Capacitance

-

150

-

pF

Cres

Reverse Transfer Capacitance

-

95

-

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VCC = 600V, IC = 30A,

RG = 10Ω, VGE = 15V,

Resistive Load, TC = 25

oC

-31

-

ns

tr

Rise Time

-

101

-

ns

td(off)

Turn-Off Delay Time

-

198

-

ns

tf

Fall Time

-

259

-

ns

Eon

Turn-On Switching Loss

-

0.54

-

mJ

Eoff

Turn-Off Switching Loss

-

1.16

1.51

mJ

Ets

Total Switching Loss

-

1.70

-

mJ

td(on)

Turn-On Delay Time

VCC = 600V, IC = 30A,

RG = 10Ω, VGE = 15V,

Resistive Load, TC = 125

oC

-40

-

ns

tr

Rise Time

-

127

-

ns

td(off)

Turn-Off Delay Time

-

211

-

ns

tf

Fall Time

-

364

-

ns

Eon

Turn-On Switching Loss

-

0.74

-

mJ

Eoff

Turn-Off Switching Loss

-

1.63

-

mJ

Ets

Total Switching Loss

-

2.37

-

mJ

Qg

Total Gate Charge

VCE = 600V, IC = 30A,

VGE = 15V

-

208

-

nC

Qge

Gate to Emitter Charge

-

41

-

nC

Qgc

Gate to Collector Charge

-

97

-

nC

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