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FGH30N120FTDTU Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FGH30N120FTDTU Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 9 page 5 www.fairchildsemi.com FGH30N120FTD Rev. A Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs. Gate Resistance 04 8 12 16 20 0 4 8 12 16 20 60A IC = 15A 30A Common Emitter TC = 125 o C Gate-Emitter Voltage, VGE [V] 110 0 2000 4000 6000 8000 Common Emitter VGE = 0V, f = 1MHz TC = 25 o C C res C oes C ies Collector-Emitter Voltage, VCE [V] 30 0 50 100 150 200 250 0 3 6 9 12 15 Common Emitter TC = 25 o C 600V 400V V CC = 200V Gate Charge, Qg [nC] 1 10 100 1000 3000 0.01 0.1 1 10 100 200 1ms 10 ms DC *Notes: 1. TC = 25 o C 2. TJ = 150 o C 3. Single Pulse 10µs 100µs Collector-Emitter Voltage, VCE [V] 0 204060 80 100 10 100 500 Common Emitter VCC = 600V, VGE = 15V IC = 30A TC = 25 o C TC = 125 o C t d(on) t r Gate Resistance, RG [Ω] 0 20406080 100 50 100 1000 2000 Common Emitter VCC = 600V, VGE = 15V IC = 30A TC = 25 o C TC = 125 o C t d(off) t f Gate Resistance, RG [Ω] Gate Resistance |
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