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MJE180 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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MJE180 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : MJE180 : MJE181 : MJE182 60 80 100 V V V VCEO Collector-Emitter Voltage : MJE180 : MJE181 : MJE182 40 60 80 V V V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 6 A IB Base Current 1 A PC Collector Dissipation (Ta=25°C) 1.5 W PC Collector Dissipation (TC=25°C) 12.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units BVCEO Collector -Emitter Breakdown Voltage : MJE180 : MJE181 : MJE182 IC = 10mA, IB = 0 40 60 80 V V V ICBO Collector Cut-off Current : MJE180 : MJE181 : MJE182 : MJE180 : MJE181 : MJE182 VCB = 60V, IB = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCB = 60V, IE = 0 @ TC = 150°C VCB = 80V, IE = 0 @ TC = 150°C VCB = 100V, IE = 0 @ TC = 150°C 0.1 0.1 0.1 0.1 0.1 0.1 µA µA µA mA mA mA IEBO Emitter Cut-off Current VBE = 7V, IC = 0 0.1 µA hFE DC Current Gain VCE = 1V, IC = 100mA VCE = 1V, IC = 500mA VCE = 1V, IC = 1.5A 50 30 12 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA 0.3 0.9 1.7 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA 1.5 2.0 V V VBE(on) Base-Emitter ON Voltage VCE = 1V, IC = 500mA 1.2 V fT Current Gain Bandwidth Product VCE = 10V, IC = 100mA 50 MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 30 pF MJE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications 1 TO-126 1. Emitter 2.Collector 3.Base |
Similar Part No. - MJE180 |
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Similar Description - MJE180 |
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