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MBR3045PT Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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MBR3045PT Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 3 page  MBR3035PT - MBR3060PT, Rev. C 2001 Fairchild Semiconductor Corporation MBR3035PT - MBR3060PT Schottky Rectifiers Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Value Units P D Power Dissipation 3.0 W RθJL Thermal Resistance, Junction to Lead 1.4 °C/W Symbol Parameter Device Units 3035PT 3045PT 3050PT 3060PT VF Forward Voltage I F = 20 A, TC = 25°C I F = 20 A, TC = 125°C I F = 30 A, TC = 25°C I F = 30 A, TC = 125°C - 0.60 0.76 0.72 0.75 0.65 - - V V V V I R Reverse Current @ rated V R T A = 25°C T A = 125°C 1.0 60 5.0 100 mA mA I RRM Peak Repetitive Reverse Surge Current 2.0 us Pulsu Width, f = 1.0 KHz 1.0 0.5 A Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guard ring for over voltage protection. Thermal Characteristics Symbol Parameter Value Units 3035PT 3045PT 3050PT 3060PT V RRM Maximum Repetitive Reverse Voltage 35 45 50 60 V I F(AV) Average Rectified Forward Current 30 A I FSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 200 A T stg Storage Temperature Range -65 to +175 °C T J Operating Junction Temperature -65 to +150 °C TO-3P/TO-247AD + CASE PIN 2 PIN 3 PIN 1 1 23 |
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