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RJF0604JPD Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJF0604JPD
Description  Silicon N Channel MOS FET Series Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0604JPD Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJF0604JPD
Target Specifications
R07DS0583EJ0200 Rev.2.00
Page 3 of 7
Apr 13, 2012
Main Characteristics
40
30
20
10
0
0
50
100
150
200
100
10
1
0.1
0.01
0.1
1
10
100
20
10
0
2
04
6
8
10
VGS = 3 V
0
0
12
3
4
5
5
4
3
2
1
9 V
8 V
7 V
5 V
4 V
VDS = 10 V
Pulse Test
Pulse Test
300
200
100
0
2
04
6
8
10
500
0.1
0.2
0.5
1
2
10
5
200
100
20
50
10
1.0 A
ID = 2.5 A
0.5 A
Pulse Test
Tc = –40
°C
25
°C
Pulse Test
VGS = 4 V
10 V
DC Operation
(Tc = 25
°C)
PW = 10 ms
150
°C
10 V
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
Operation in
this area is
limited by R
DS (on)
Thermal shut down
Operation area


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