RJF0604JPD

Target Specifications

R07DS0583EJ0200 Rev.2.00

Page 2 of 7

Apr 13, 2012

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

3.5

—

—

V

Input voltage

—

—

1.2

V

—

—

100

A

—

—

50

A

Input current

(Gate non shut down)

—

—

1

A

—

0.8

—

mA

Input current

(Gate shut down)

—

0.35

—

mA

Shut down temperature

Tsd

—

175

—

C

Channel temperature

Gate operation voltage

Vop

3.5

—

12

V

Drain current

(Current limitation value)

5

—

—

A

Note 4

Note;

4. Pulse test

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

—

—

17

A

Note 5

—

—

10

mA

Drain current

5

—

—

A

Note 5

Drain to source breakdown

voltage

60

—

—

V

16

—

—

V

Gate to source breakdown

voltage

–2.5

—

—

V

—

—

100

A

—

—

50

A

—

—

1

A

Gate to source leak current

—

—

–100

A

—

0.8

—

mA

Input current (shut down)

—

0.35

—

mA

Zero gate voltage drain current

—

—

10

A

Gate to source cutoff voltage

1.1

—

2.1

V

Forward transfer admittance

4

9

—

S

Note 5

—

58

100

m



Note 5

Static drain to source on state

resistance

—

42

75

m



Note 5

Output capacitance

Coss

—

276

—

pF

Turn-on delay time

—

1.6

—

s

Rise time

—

4.7

—

s

Turn-off delay time

—

3.7

—

s

Fall time

—

4.4

—

s

Body-drain diode forward

voltage

—

0.81

—

V

Body-drain diode reverse

recovery time

—

67

—

ns

—

3.4

—

ms

Over load shut down

operation time

Note 6

—

1.2

—

ms

Notes: 5. Pulse test

6. Including the junction temperature rise of the over loaded condition.