RJF0604JPD_12 datasheet(4/8 Pages) RENESAS

Part #	RJF0604JPD

Description	Silicon N Channel MOS FET Series Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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4 / 8 page

RJF0604JPD

Target Specifications

R07DS0583EJ0200 Rev.2.00

Page 4 of 7

Apr 13, 2012

120

100

–50 –25

0

25

75 100

50

150

125

0

20

40

60

80

Pulse Test

10 V

VGS = 4 V

ID = 2 A, 0.5 A, 1 A

100

10

1

0.1

1

10

Tc = –40°C

150°C

VDS = 10 V

Pulse Test

25°C

0.1

1

10

100

1000

10

100

1

di / dt = 50 A /

μs

VGS = 0, Ta = 25°C

010

20

30

40

60

50

10000

3000

1000

300

100

30

10

5

0

1

2

3

4

0.2

0.4

0.6

0.8

1.0

VGS = 5 V

100

10

1

0.1

0.2

0.5

1

2

5

0.1

Pulse Test

tf

tr

td(off)

td(on)

0 V

VGS = 10 V, VDD = 30 V

PW = 300

μs, duty ≤ 1 %

Coss

VGS = 0

f = 1 MHz

Case Temperature

Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Drain Current

ID (A)

Switching Characteristics

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RJF0604JPD Datasheet(PDF) 4 Page - Renesas Technology Corp

RJF0604JPD Datasheet(HTML) 4 Page - Renesas Technology Corp

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