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RJF0604DPD Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # RJF0604DPD
Description  Silicon N Channel MOS FET Series Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0604DPD Datasheet(HTML) 5 Page - Renesas Technology Corp

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RJF0604DPD
Target Specifications
R07DS0713EJ0100 Rev.1.00
Page 5 of 7
Apr 17, 2012
16
12
14
10
8
4
6
2
0
100
μ
100 m
200
180
160
140
120
0
100
24
6
8
10
ID = 0.5 A
1 m
10 m
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.01
0.02
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
24 V
VDD = 16 V
Gate to Source Voltage
VGS (V)
Shutdown Case Temperature vs.
Gate to Source Voltage
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Shutdown Time of Load-Short Test
Pw (S)


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