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1M0380R Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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1M0380R Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB 2 Absolute Maximum Ratings Notes: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=51mH, VDD=50V, RG=25 Ω, starting Tj=25°C 4. L=13 µH, starting Tj=25°C Parameter Symbol Value Unit Drain-source (GND) voltage (1) VDSS 800 V Drain-Gate voltage (RGS=1M Ω)VDGR 800 V Gate-source (GND) voltage VGS ±30 V Drain current pulsed (2) IDM 12 ADC Single pulsed avalanche energy (3) EAS 95 mJ Avalanche current(4) IAS 6A Continuous drain current (TC=25 °C) ID 3.0 ADC Continuous drain current (TC=100 °C) ID 2.1 ADC Supply voltage VCC 30 V Analog input voltage range VFB −0.3 to VSD V Total power dissipation PD 35 W Derating 0.28 W/ °C Operating temperature TOPR −25 to +85 °C Storage temperature TSTG −55 to +150 °C |
Similar Part No. - 1M0380R |
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Similar Description - 1M0380R |
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