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L6562AT Datasheet(PDF) 7 Page - STMicroelectronics |
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L6562AT Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 25 page ![]() Electrical characteristics L6562AT 7/25 Symbol Parameter Test condition Min Typ Max Unit Output overvoltage IOVP Dynamic OVP triggering current 19.5 27 30.5 µA Hys Hysteresis (3) 20 µA Static OVP threshold (1) 2.12.252.4 V Current sense comparator ICS Input bias current VCS = 0 -1 µA tLEB Leading edge blanking 100 200 300 ns td(H-L) Delay to output 175 ns VCS Current sense clamp VCOMP = Upper clamp, Vmult = 1.5 V 1.0 1.08 1.16 V Vcsoffset Current sense offset VMULT = 0 25 mV VMULT = 2.5 V 5 Zero current detector VZCDH Upper clamp voltage IZCD = 2.5 mA 5.0 5.7 6.5 V VZCDL Lower clamp voltage IZCD = - 2.5 mA -0.5 0 0.5 V VZCDA Arming voltage (positive-going edge) (3) 1.4 V VZCDT Triggering voltage (negative-going edge) (3) 0.7 V IZCDb Input bias current VZCD = 1 to 4.5 V 2 µA IZCDsrc Source current capability -1.5 mA IZCDsnk Sink current capability 1.5 mA Starter tSTART Start timer period 75 190 300 µs Gate driver VOL Output low voltage Isink = 100 mA 0.6 1.2 V VOH Output high voltage Isource = 5 mA 9.5 10.3 V Isrcpk Peak source current -0.6 A Isnkpk Peak sink current 0.8 A tf Voltage fall time 30 70 ns tr Voltage rise time 60 130 ns VOclamp Output clamp voltage Isource = 5 mA; Vcc = 20 V 10 12 15 V UVLO saturation Vcc = 0 to VCCon, Isink = 2 mA 1.1 V 1. All the parameters are in tracking 2. The multiplier output is given by: 3. Parameters guaranteed by design, functionality tested in production. Table 5. Electrical characteristics (continued) ( ) 5 . 2 V V K V COMP MULT cs − ⋅ = ⋅ |
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