R1QKA3618CBG datasheet(27/38 Pages) RENESAS

Part #	R1QKA3618CBG

Description	36-Mbit QDRII SRAM 4-word Burst

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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27 / 38 page

PAGE : 27

Rev. 0.09a : 2011.09.14

R1QGA36**CB* / R1QKA36**CB* Series

0 V

V

IN

V

DD,

output disabled

A

5.0

I

LO

Output leakage current

I

OLC = 100

A

V

0.2

V

OL1

Output low voltage

I

OLT = 2 mA

V

0.4

V

OL2

5.0

0.5

V

DD + 0.3

Max

V

0.3

V

IL

Input low voltage

0 V

V

IN

V

DD

A

5.0

I

LI

Input leakage current

|I

OHC| = 100

A

V

1.6

V

OH1

Output high voltage

|I

OHT| = 2 mA

V

1.4

V

OH2

TAP DC Operating Characteristics

(Ta =

0 ~ +70 C @ R1Q*A*****BG-**R** series)

(Ta = -40 ~ +85 C @ R1Q*A*****BG-**I** series)

(V

DD =1.8V

0.1V)

Typ

V

Unit

Notes:

1.

All voltages referenced to V

SS (GND).

2.

At power-up, V

DD and VDDQ are assumed to be a linear ramp from 0V to VDD(min.) or

V

DDQ(min.) within 200ms. During this time VDDQ < VDD and VIH < VDDQ.

During normal operation, V

DDQ must not exceed VDD.

Notes

+1.3

V

IH

Input high voltage

Min

Symbol

Parameter

Common

R10DS0161EJ0009

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R1QKA3618CBG Datasheet(PDF) 27 Page - Renesas Technology Corp

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