R1QKA3618CBG datasheet(21/38 Pages) RENESAS

Part #	R1QKA3618CBG

Description	36-Mbit QDRII SRAM 4-word Burst

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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21 / 38 page

PAGE : 21

Rev. 0.09a : 2011.09.14

R1QGA36**CB* / R1QKA36**CB* Series

Common

AC Test Conditions

Input waveform (Rise/fall time

0.3 ns)

1.25V

0.25V

0.75V

Test points

Output waveform

V

DDQ/2

Test points

V

DDQ/2

pF

Unit

Capacitance

(Ta = +25 C, Frequency = 1.0MHz, V

DD =1.8V, VDDQ =1.5V)

5

4

Typ

6

5

Max

Notes:

1. These parameters are sampled and not 100% tested.

2. Except JTAG (TCK, TMS, TDI, TDO) pins.

V

I/O = 0 V

V

CLK = 0 V

V

IN = 0 V

Test condition

1, 2

C

CLK

Clock input capacitance (K, /K, C, /C)

1, 2

C

I/O

Output capacitance

(Q(separate), DQ(common), CQ, /CQ)

1, 2

C

IN

Input capacitance

(SA, /R, /W, /BW, D(separate))

Notes

Min

Symbol

Parameter

-4.4

11.0

Typ

EIA/JEDEC JESD51

Test condition

C/W

Unit

Thermal Resistance

1 m/s

Airflow

Notes:

1. These parameters are calculated under the condition. These are reference values.

2. Tj = Ta +

JA

Pd

Tj = Tc +

JC

Pd

where

Tj : junction temperature when the device has achieved a steady-state

after application of Pd ( C)

Ta : ambient temperature ( C)

Tc : temperature of external surface of the package or case ( C)

JA : thermal resistance from junction-to-ambient ( C/W)

JC : thermal resistance from junction-to-case (package) ( C/W)

Pd : power dissipation that produced change in junction temperature (W) (cf.JESD51-2A)

JC

Junction to Case

1

JA

Junction to Ambient

Notes

Symbol

Parameter

R10DS0161EJ0009

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