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R1QKA3618CBG Datasheet(PDF) 1 Page - Renesas Technology Corp |
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R1QKA3618CBG Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 38 page PAGE : 1 Rev. 0.09a : 2011.09.14 Rev. 0.09a 2011.09.14 R1QGA36**CB* / R1QKA36**CB* Series Description The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package. # = A: Read Latency =2.5, w/o ODT # = G: Read Latency =2.0, w/o ODT # = D: Read Latency =2.5, w/ ODT # = K: Read Latency =2.0, w/ ODT hinT=00000.0000.0000.0000.0000--- 00000.0000.0000.1100.1100--- 00000.0000.0000.0000.0000--- QDRII+_RL20 Features Power Supply • 1.8 V for core (V DD), 1.4 V to VDD for I/O (VDDQ) Clock • Fast clock cycle time for high bandwidth • Two input clocks (K and /K) for precise DDR timing at clock rising edges only • Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems • Clock-stop capability with s restart I/O • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR read and write operation • HSTL I/O • User programmable output impedance • DLL/PLL circuitry for wide output data valid window and future frequency scaling • Data valid pin (QVLD) to indicate valid data on the output Function • Four-tick burst for reduced address frequency • Internally self-timed write control • Simple control logic for easy depth expansion • JTAG 1149.1 compatible test access port Package • 165 FBGA package (15 x 17 x 1.4 mm) 36-Mbit QDR™II+ SRAM 4-word Burst R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG R1QKA3636CBG / R1QKA3618CBG / R1QKA3609CBG Notes: 1. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, Samsung, and Renesas Electronics Corp. (QDR Co-Development Team) 2. The specifications of this device are subject to change without notice. Please contact your nearest Renesas Electronics Sales Office regarding specifications. 3. Refer to "http://www.renesas.com/products/memory/fast_sram/qdr_sram/qdr_sram_root.jsp" for the latest and detailed information. 4. Descriptions about x9 parts in this datasheet are just for reference. R10DS0161EJ0009 R10DS0161EJ0009 |
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