H11D4 datasheet(2/8 Pages) FAIRCHILD

Part #	H11D4

Description	HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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2 / 8 page

8/9/00

200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

Notes

* Parameters meet or exceed JEDEC registered data (for 4N38 only)

** All typical values at TA = 25°C

ELECTRICAL CHARACTERISTICS (T

A = 25°C Unless otherwise specified.)

Characteristic

Test Conditions

Symbol

Device

Min

Typ**

Max

Unit

EMITTER

(IF = 10 mA)

VF

ALL

1.15

1.5

V

*Forward Voltage

Forward Voltage Temp.

!VF

ALL

-1.8

mV/°C

Coefficient

!TA

Reverse Breakdown Voltage

(IR = 10 µA)

BVR

ALL

6

25

V

Junction Capacitance

(VF = 0 V, f = 1 MHz)

CJ

ALL

50

pF

(VF = 1 V, f = 1 MHz)

ALL

65

pF

*Reverse Leakage Current

(VR = 6 V)

IR

ALL

0.05

10

µA

DETECTOR

(RBE = 1 M")

BVCER

H11D1/2

300

*Breakdown Voltage

(IC = 1.0 mA, IF = 0)

H11D3/4

200

Collector to Emitter

(No RBE) (IC = 1.0 mA)

BVCEO

4N38

80

H11D1/2

300

V

*Collector to Base

(IC = 100 µA, IF = 0)

BVCBO

H11D3/4

200

4N38

80

Emitter to Base

(IE = 100 µA , IF = 0)

BVEBO

4N38

7

Emitter to Collector

BVECO

ALL

7

10

(VCE = 200 V, IF = 0, TA = 25°C)

H11D1/2

100

nA

*Leakage Current

(VCE = 200 V, IF = 0, TA = 100°C)

ICER

250

µA

Collector to Emitter

(VCE = 100 V, IF = 0, TA = 25°C)

H11D3/4

100

nA

(RBE = 1 M")(VCE = 100 V, IF = 0, TA = 100°C)

250

µA

(No RBE) (VCE = 60 V, IF = 0, TA = 25°C)

ICEO

4N38

50

nA

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter

Symbol

Value

Units

DETECTOR

300

mW

*Power Dissipation @ TA = 25°CPD

Derate linearly above 25°C

4.0

mW/°C

H11D1 - H11D2

300

*Collector to Emitter Voltage

H11D3 - H11D4

VCER

200

4N38

80

H11D1 - H11D2

300

V

*Collector Base Voltage

H11D3 - H11D4

VCBO

200

4N38

80

*Emitter to Collector Voltage

H11D1 - H11D2

VECO

7

H11D3 - H11D4

Collector Current (Continuous)

100

mA

ABSOLUTE MAXIMUM RATINGS (Cont.)

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