Parameter

Symbol

Value

Units

TOTAL DEVICE

-55 to +150

°C

Storage Temperature

Operating Temperature

-55 to +100

°C

Lead Solder Temperature

260 for 10 sec

°C

260

mW

Derate above 25°C

3.5

mW/°C

EMITTER

80

mA

*Forward DC Current

*Reverse Input Voltage

6.0

V

*Forward Current - Peak (1µs pulse, 300pps)

3.0

A

150

mW

Derate above 25°C

1.41

mW/°C

FEATURES

• High Voltage

• High isolation voltage

- 5300 VAC RMS - 1 minute

- 7500 VAC PEAK - 1 minute

• Underwriters Laboratory (UL) recognized File# E90700

DESCRIPTION

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting

diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

8/9/00

200046A

EMITTER

COLLECTOR

1

2

3

ANODE

CATHODE

4

5

6 BASE

N/C

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1

H11D2

H11D3

H11D4

4N38

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls

ABSOLUTE MAXIMUM RATINGS